­
­
­
­

Inventi Impact: Optical Technologies

Articles

  • Inventi:eot/11/12
    LASER-COMBINED SCANNING TUNNELING MICROSCOPY ON THE CARRIER DYNAMICS IN LOW-TEMPERATURE-GROWN GAAS/ALGAAS/GAAS
    31-Dec-2011 Research 2012 : January - March
    Yasuhiko Terada, Shoji Yoshida, Osamu Takeuchi, Hidemi Shigekawa

    We investigated carrier recombination dynamics in a low-temperature-grown GaAs (LT-GaAs)/AlGaAs/GaAs heterostructure by laser-combined scanning tunneling microscopy, shaken-pulse-pair-excited STM (SPPX-STM). With the AlGaAs interlayer as a barrier against the flow of photocarriers, recombination lifetimes in LT-GaAs of 4.0?ps and GaAs of 4.8?ns were successfully observed separately. We directly demonstrated the high temporal resolution of SPPX-STM by showing the recombination lifetime of carriers in LT-GaAs (4.0?ps) in the range of subpicosecond temporal resolution. In the carrier-lifetime-mapping measurement, a blurring of recombination lifetime up to 50?nm was observed at the LT-GaAs/AlGaAs boundary, which was discussed in consideration of the screening length of the electric field from the STM probe. The effect of the built-in potential on the signal, caused by the existence of LT-GaAs/AlGaAs/GaAs boundaries, was discussed in detail.

    How to Cite this Article
    CC Compliant Citation: Yasuhiko Terada, Shoji Yoshida, Osamu\r\nTakeuchi, and Hidemi Shigekawa, â??Laser-Combined Scanning\r\nTunneling Microscopy on the Carrier Dynamics in Low-\r\nTemperature-Grown GaAs/AlGaAs/GaAs,â? Advances in Optical\r\nTechnologies, vol. 2011, Article ID 510186, 9 pages, 2011.\r\ndoi:10.1155/2011/510186
    Download Full Text